publication date : oct 2011 1 outline drawing 0.2+/-0.05 0 . 2 + / - 0 . 0 5 0 . 9 + / - 0 . 1 index mark (gate) 6.0+/-0.15 4 . 9 + / - 0 . 1 5 terminal no. 1.drain (output) 2.source (gnd) 3.gate (input) note ( ):center value unit:mm 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 . 0 + / - 0 . 0 5 (0.25) 2 3 1 3 . 5 + / - 0 . 0 5 2 . 0 + / - 0 . 0 5 (0.25) ( 0 . 2 2 ) ( 0 . 2 2 ) < silicon rf power mos fet ( discrete ) > rd0 7mvs1 rohs compliance, silicon mosfet power transistor,175mhz,520mhz,7w description RD07MVS1 is a mos fet type transistor specifically designed for v hf /uhf rf power amplifiers applications. features high po wer g ain: pout> 7 w, gp> 10 db@vdd= 7.2 v,f= 520m hz high efficiency: 60 %typ. (175mhz) high efficiency: 55 %typ. (520mhz) application for output stage of high power amplifiers in v hf /uhf band mobile radio sets. rohs compliant rd0 7 m v s1 - 101, t112 is a rohs com plian t product. rohs compliance is indicating by the letter ?g? after the lot marking. this product includes the lead in high melting temperature type solders. how ever, it is applicable to the following exceptions of rohs directions. 1.lead in high melt ing temperature type solders(i.e.tin - lead solder alloys containing more than85% lead.)
< silicon rf power mos fet ( discrete ) > RD07MVS1 rohs compliance, silicon mosfet power transistor,175mhz,520mhz,7w publication date : o ct 2011 2 absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit vdss drain to source voltage vgs=0v 30 v vgss gate to source vo ltage vds=0v +/ - 20 v pch channel dissipation tc=25 c 50 w pin input power zg=zl=50 ? 1.5 w id drain current - 3 a t ch junction temperature - 150 c tstg storage temperature - - 40 to +1 25 c rth j - c thermal resistance junction to case 2.5 c/w note: above parameters are guaranteed independently. electrical characteristics (tc=25 c , unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss zero gate voltage drain current v ds =1 7 v, v gs =0v - - 200 u a i gss gate to source leak current v gs =10v, v ds =0v - - 1 u a v th gate t hreshold voltage v ds =1 2 v, i ds =1ma 1.4 1.7 2.4 v pout 1 output power 7 8 - w ? d 1 drain efficiency f= 175 mhz , v dd = 7.2 v pin= 0.3w,idq=700ma 55 60 - % pout 2 output power 7 8 - w ? d 2 drain efficiency f= 520 mhz , v dd = 7.2 v pin= 0.7w,idq=750ma 50 55 - % load vswr tolerance v dd =9.2v,po=7w( pin control ) f=175mhz,idq=700ma,zg=50 ? load vswr=20:1(all phase) no destroy - load vswr tolerance v dd =9.2v,po=7w( pin control ) f=520mhz,idq=750ma,zg=50 ? load vswr=20:1(all phas e) no destroy - note: above parameters, ratings, limits and conditions are subject to change.
< silicon rf power mos fet ( discrete ) > RD07MVS1 rohs compliance, silicon mosfet power transistor,175mhz,520mhz,7w publication date : o ct 2011 3 typical characteristics vds vs. crss characteristics 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 vds(v) c r s s ( p f ) ta =+ 25 c f=1mhz vds vs. ciss characteristics 0 20 40 60 80 100 120 140 160 0 5 10 15 20 vds(v) c i s s ( p f ) ta =+ 25 c f=1mhz vds vs. coss characteristics 0 20 40 60 80 100 120 0 5 10 15 20 vds(v) c o s s ( p f ) ta =+ 25 c f=1mhz vds-ids characteristics 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 vds(v) i d s ( a ) ta =+ 25 c vgs=5v vgs=4v vgs=3v vgs=3.5v vgs=4.5v vgs-ids characteristics 0.0 2.0 4.0 6.0 8.0 10.0 0 1 2 3 4 5 vgs(v) i d s ( a ) , g m ( s ) ta =+ 25 c vds=10v ids gm channel dissipation vs. ambient temperature 0 10 20 30 40 50 60 0 40 80 120 160 200 ambient temperature ta(deg:c.) c h a n n e l d i s s i p a t i o n p c h ( w ) . . . on pcb(*1) with throgh hole and heat-sink on pcb(*1) with heat-sink *1:the material of the pcb glass epoxy (t=0.6 mm)
< silicon rf power mos fet ( discrete ) > RD07MVS1 rohs compliance, silicon mosfet power transistor,175mhz,520mhz,7w publication date : o ct 2011 4 typical characteristics pin-po characteristics @f=175mhz 0 10 20 30 40 -5 0 5 10 15 20 25 30 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 d ( % ) ta=+25c f=175mhz vdd=7.2v idq=700ma po gp pin-po characteristics @f=175mhz 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0 500 1000 pin(mw) p o u t ( w ) , i d d ( a ) 20 40 60 80 100 d ( % ) po d idd ta=25c f=175mhz vdd=7.2v idq=700ma vdd-po characteristics @f=175mhz 0 5 10 15 20 25 30 4 6 8 10 12 14 vdd(v) p o ( w ) 0 1 2 3 4 5 6 i d d ( a ) po idd ta=25c f=175mhz pin=0.3w icq=700ma zg=zi=50 ohm pin-po characteristics @f=520mhz 0 10 20 30 40 0 5 10 15 20 25 30 35 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 d ( % ) ta=+25c f=520mhz vdd=7.2v idq=750ma po gp pin-po characteristics @f=520mhz 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 pin(w) p o u t ( w ) , i d d ( a ) 30 40 50 60 70 80 90 100 d ( % ) po d idd ta=25c f=520mhz vdd=7.2v idq=750ma vdd-po characteristics @f=520mhz 0 5 10 15 20 25 4 6 8 10 12 14 vdd(v) p o ( w ) 0 1 2 3 4 5 i d d ( a ) po idd ta=25c f=520mhz pin=0.7w icq=750ma zg=zi=50 ohm
< silicon rf power mos fet ( discrete ) > RD07MVS1 rohs compliance, silicon mosfet power transistor,175mhz,520mhz,7w publication date : o ct 2011 5 typical characteristics vgs-ids characteristics 2 0 2 4 6 8 10 0 1 2 3 4 5 vgs(v) i d s ( a ) vds=10v tc=-25~+75c -25c +75c +25c
< silicon rf power mos fet ( discrete ) > RD07MVS1 rohs compliance, silicon mosfet power transistor,175mhz,520mhz,7w publication date : o ct 2011 6 test circuit(f=175mhz) 5mm 62pf 140pf rf-in 19.5m m 22pf 22pf 4.7k ohm c1 180pf c2 1 0 f , 5 0 v 56pf 28.5mm 24.5mm 6.5mm 19mm 11.5m m 3mm 680 ohm 3.5mm 11.5mm l 6.5mm 15mm 10mm 5mm 62pf rf-out vgg vdd RD07MVS1 175mhz l:enameled wire 7 turns,d:0.43mm,2.46mmm o.d c 1 , c 2 : 1 0 0 0 p f , 0 . 0 0 2 2 f i n p a r a l l e l note:board material ptfe substrate micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm w:line width=1.0mm 100pf 16pf test circuit(f=520mhz) 68pf rf-in 4.7k ohm c1 10pf 46mm 19mm 3.5mm 3.5mm 3.5mm vgg RD07MVS1 520mhz 37pf 9mm 20pf 20pf c2 10 f , 50 v 18pf 6.5mm l 6.5mm 19mm 44.5mm 62pf rf-out vdd 6pf l:enameled wire 5 turns,d:0.43mm,2.46mmm o.d c 1 , c 2 : 1000 pf , 0 . 0022 f in parallel note:board material ptfe substrate micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm w:line width=1.0mm
< silicon rf power mos fet ( discrete ) > RD07MVS1 rohs compliance, silicon mosfet power transistor,175mhz,520mhz,7w publication date : o ct 2011 7 input/output impedance vs. frequency characteristics 175mhz zin* 175mhz zout* 175mhz zin* zout* zo=10 ? vdd=7.2v, idq=700ma(vgg adj.),pin=0.28w zin*=1.55+j5.53 zout*=3.24 - j0.26 zin*: complex conjugate of input impedance zout*: complex conjugate of input impedance 520mhz zin* zout* zo=10 ? vdd=7.2v, idq=750ma(vgg adj.),pin=0.7w zin*=0.76+j0.06 zout*=1.61 - j0.52 zin*: complex conjugate of input impedance zout*: complex conjugate of input impedance 520mhz z in* 520mhz zout* output impedance
< silicon rf power mos fet ( discrete ) > RD07MVS1 rohs compliance, silicon mosfet power transistor,175mhz,520mhz,7w publication date : o ct 2011 8 RD07MVS1 s-parameter data (@vdd=7.2v, id=750ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.890 -174.1 5.508 82.1 0.016 -3.6 0.790 -172.8 150 0.897 -175.6 3.613 75.0 0.015 -8.5 0.801 -174.0 175 0.899 -176.0 3.028 72.4 0.015 -9.6 0.802 -174.1 200 0.901 -176.3 2.604 70.1 0.014 -10.9 0.815 -174.0 250 0.907 -176.7 2.019 65.6 0.014 -12.7 0.844 -174.1 300 0.913 -177.0 1.614 60.7 0.012 -15.3 0.843 -174.1 350 0.918 -177.3 1.308 57.1 0.011 -15.8 0.860 -174.4 400 0.924 -177.8 1.102 54.1 0.010 -14.2 0.879 -175.0 450 0.928 -178.0 0.929 50.1 0.009 -14.8 0.882 -175.1 500 0.933 -178.3 0.790 48.6 0.008 -9.6 0.895 -175.5 520 0.935 -178.5 0.753 47.6 0.007 -7.7 0.901 -175.8 550 0.937 -178.8 0.692 45.3 0.007 -5.6 0.906 -176.2 600 0.940 -179.2 0.595 43.6 0.006 0.4 0.907 -176.6 650 0.942 -179.4 0.529 42.4 0.006 17.1 0.916 -177.2 700 0.944 -179.8 0.467 40.2 0.005 21.8 0.923 -177.6 750 0.947 179.8 0.416 39.4 0.005 40.9 0.921 -178.0 800 0.948 179.4 0.374 38.6 0.004 52.0 0.930 -178.8 850 0.949 179.0 0.343 37.6 0.005 67.1 0.933 -178.9 900 0.951 178.6 0.304 36.5 0.005 72.6 0.932 -179.3 950 0.951 178.2 0.284 37.6 0.006 85.8 0.937 179.8 1000 0.952 177.9 0.262 35.1 0.007 85.1 0.938 179.7 1050 0.950 177.4 0.234 36.0 0.008 89.8 0.938 179.3 1100 0.952 176.9 0.226 35.8 0.009 93.4 0.940 178.2 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > RD07MVS1 rohs compliance, silicon mosfet power transistor,175mhz,520mhz,7w publication date : o ct 2011 9 a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of m itsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specifi cation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sen sitive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltag e. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regard ing assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s o riginal form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power mos fet ( discrete ) > RD07MVS1 rohs compliance, silicon mosfet power transistor,175mhz,520mhz,7w publication date : o ct 2011 10 ? 2011 mitsubishi electric co rporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporat ion puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to giv e due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not conve y any license under any intellectual property rights, or any other rights, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights , originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algori thms represents information on products at the time of publication of these material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers cont act mitsubishi electric corporation or an authorized m itsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographic al errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate al l information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e information contained herein. ? mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an author ized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prio r written approval of mitsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported under a licens e from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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